Threshold Switching Characteristics of Nb/NbO2/TiN Vertical Devices

Article
Author:Wang, Yuhan, Engineering Graduate-wengUniversity of Virginia
Abstract:

We have observed threshold switching (TS) with minimal hysteresis and a small threshold
electric field (60–90 kV/cm) in Nb/NbO2/TiN structures. The TS was unipolar with certain repeatability.
A less sharp but still sizable change in the device resistance can be observed up to 150 ◦C. The TS
without Nb capping layer exhibited hysteretic characteristics. It was proposed that the surface Nb2O5
layer on NbO2 could significantly modify the TS in this vertical device. This understanding of the surface
effect will allow further control of the non-linear IV characteristics for NbO2-based switches or selector
devices.

Keywords:
Niobium dioxide, threshold switching, metal-insulator transition.
Rights:
Attribution 4.0 International (CC BY)
Contributors:Comes, Ryan, Fundamental and Computational Sciences DirectoratePacific Northwest Laboratory Wolf, Stuart , Department of Physics/Materials Science and EngineeringUniversity of Virginia
Language:
English
Source Citation:

10.1109/JEDS.2015.2503922

Publisher:
IEEE
Published Date:
11/15/2015
Sponsoring Agency:
IEEE Electron Devices Society